Product Datasheet Search Results:

IRFF330.pdf1 Pages, 75 KB, Scan
IRFF330
Motorola / Freescale Semiconductor
N-Channel Enhancement TMOS FET Transistor, TO-39
IRFF330.pdf2 Pages, 123 KB, Scan
IRFF330
General Electric
Power Transistor Data Book 1985
IRFF330.pdf5 Pages, 177 KB, Scan
IRFF330
Harris Semiconductor
Power MOSFET Data Book 1990
IRFF330R.pdf5 Pages, 192 KB, Scan
IRFF330R
Harris Semiconductor
Power MOSFET Data Book 1990
IRFF330.pdf7 Pages, 1174 KB, Original
IRFF330
Infineon Technologies Ag
Trans MOSFET N-CH 400V 3A 3-Pin TO-39
IRFF330.pdf7 Pages, 325 KB, Original
IRFF330
Intersil Corporation
3.5A, 400V, 1.000 ?, N-Channel Power MOSFET
IRFF330.pdf7 Pages, 130 KB, Original
IRFF330
International Rectifier
3 A, 400 V, 1.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRFF330PBF.pdf7 Pages, 130 KB, Original
IRFF330PBF
International Rectifier
3 A, 400 V, 1.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRFF330R.pdf1 Pages, 48 KB, Original
IRFF330R
International Rectifier
Rugged Series Power MOSFETs - N-Channel
IRFF330.pdf2 Pages, 121 KB, Scan
IRFF330
N/a
FET Data Book
IRFF330R.pdf1 Pages, 81 KB, Scan
IRFF330R
N/a
Shortform Datasheet & Cross References Data
IRFF330.pdf1 Pages, 12 KB, Original
IRFF330
Semelab Plc.
3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

Product Details Search Results:

Infineon.com/IRFF330
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"25(W)","Continuous Drain Current":"3(A)","Mounting":"Through Hole","Drain-Source On-Volt":"400(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1437 Bytes - 13:46:25, 14 January 2025
Irf.com/IRFF330
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.5100 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.15 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":...
1446 Bytes - 13:46:25, 14 January 2025
Irf.com/IRFF330PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.5100 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.15 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL...
1519 Bytes - 13:46:25, 14 January 2025
Semelab.co.uk/IRFF330
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source O...
1299 Bytes - 13:46:25, 14 January 2025
Semelab.co.uk/IRFF330-JQR-B
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source O...
1335 Bytes - 13:46:25, 14 January 2025
Semelab.co.uk/IRFF330-JQR-BR1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Channel Type":"N-CHANNEL","Drain Current-Max (ID)":"3 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":...
1397 Bytes - 13:46:25, 14 January 2025
Semelab.co.uk/IRFF330R1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Channel Type":"N-CHANNEL","Drain Current-Max (ID)":"3 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":...
1361 Bytes - 13:46:25, 14 January 2025
Various/IRFF330R
{"C(iss) Max. (F)":"700p","Absolute Max. Power Diss. (W)":"25","V(BR)DSS (V)":"400","g(fs) Max, (S) Trans. conduct,":"3.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"55n","r(DS)on Max. (Ohms)":"1.0","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"14","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.0","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF","M...
1263 Bytes - 13:46:25, 14 January 2025

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