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2N4235JANTXV.pdf2 Pages, 46 KB, Original
2N4235JANTXV
Microsemi Corporation
NPN POWER AMPLIFIER SILICON TRANSISTOR

Product Details Search Results:

Irf.com/2N7335JANTXV
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"60(Max) ns","Typical Turn-Off Delay Time":"40(Max) ns","Description":"Value","Maximum Continuous Drain Current":"0.75 A","Package":"14MO-036AB","Typical Turn-On Delay Time":"30(Max) ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"1730@10V mOhm","Manufacturer":"International Rectifier"}...
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Microsemi.com/2N3635JANTXV
{"Collector Current (DC) ":"1 A","Transistor Polarity":"PNP","Collector Current (DC) (Max)":"1 A","Collector-Emitter Voltage":"140 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Category ":"Bipolar Power","DC Current Gain (Min)":"100","Operating Temperature Classification":"Military","Power Dissipation":"1 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-39","Collector-Base Voltage":"140 V","Rad Hardened":"No","DC Current Gain":"55","Pin Count":"3","Number of Elements":"1"}...
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