SML1001RHN-QR-B
10 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA

From Semelab Plc.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min1000 V
Drain Current-Max (ID)10 A
Drain-source On Resistance-Max1 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionTO-258, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)40 A
Terminal FinishNOT SPECIFIED
Terminal FormPIN/PEG
Terminal PositionSINGLE
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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